![]() Haitong Li, Zizhen Jiang, Peng Huang, Yi Wu, Hong-Yu Chen, Bin Gao, Xiaoyan Liu, Jinfeng Kang, and H.-S. Philip Wong, "A Compact Model for Metal–Oxide Resistive Random Access Memory With Experiment Verification," IEEE Transactions on Electron Devices, vol. Zizhen Jiang, Yi Wu, Shimeng Yu, Lin Yang, Kay Song, Zia Karim, and H. Engel, Shimeng Yu, Ximeng Guan Related Publications Haitong Li - haitongl stanford edu Contributors Shengjun (Sophia) Qin - sjqin stanford edu Zizhen (Jane) Jiang - jiangzz stanford edu Rram-compact-model-developer list stanford edu Please cite if you use the model/data in your work. Please contact RRAM Model Developer Mailing List (nano_rram_model list stanford edu) to request access and discuss your use of the model with the developers at Peking University and Stanford University.ĭownload the Verilog-A RRAM model v2.0.0 beta. This version v2.0.0 beta distributed on Stanford Nano Group website is a beta version for our own collaborators and advanced users. We recommend users to download the supported version v1.0.0 of the model from the NSF hanoHUB NEEDS website.ĭownload the Verilog-A RRAM model v1.0.0. Note: HSPICE H-2013.03-SP2 is the recommended software. It is an accurate and handy tool for design exploration and verification of RRAM circuits. The RRAM model can be instantiated directly in HSPICE netlists to explore the impacts of RRAM on the circuit performance. In addition, stochastic and temperature-dependent filament movement (δg) is also included. This distance is found by calculating the growth of the gap, taking into consideration the electric field, temperature-enhanced oxygen ion migration, and local temperature due to Joule heating. The current conduction is exponentially dependent on the tunneling gap distance. The size of the tunneling gap (g), which is the distance between the tip of the filament and the opposite electrode, is the primary variable determining device resistance. The complex process of ion and vacancy migration was simplified into the growth of a single dominant filament that preserved the essential switching physics. In principle, this model has no limitations on the size of the RRAM cell. Thanks a lot! □ – Kprofiles.The Stanford-PKU RRAM Model is a SPICE-compatible compact model which describes switching performance for bipolar metal oxide RRAM. If you use info from our profile, please kindly put a link to this post. Note: Please don’t copy-paste the content of this page to other sites/places on the web. ![]() – Yubin’s Ideal Type: “My ideal type is someone who is athletic.” – During Unpretty Rapstar, her popularity exploded, causing the phenomenon “Girl Crush”. – In February 2020 Yubin opened her own Entertainment called RRR meaning Real Recognize Real. – On August 17, 2015, Yubin was confirmed to join Unpretty Rapstar 2. – She made her acting debut with the drama, The Virus. – Her hobbies are listening to music and collecting CDs. – She likes to eat raw fish, salad, and apples. – When she was younger, she was a tomboy and had short hair. – When she first joined Wonder Girls, she says she was scared of Yeeun. – She has written her own raps for several Wonder Girls songs (“Girls Girls”, “Me, In”, “Sweet Dreams”, etc.) – She debuted in 2007 with the Wonder Girls and replaced HyunA who left due to medical problems. – In 2007, she was supposed to debut with G.NA, SECRET‘s Hyosung, former After School‘s UEE, and UNI.T‘s Jiwon as girl group ‘ Five Girls’ but they disbanded. – Education: Jungam Elementary School, Leland High School, Myongji University She used to live in San Jose, California, USA. – Her birthplace is Gwangju, South Korea. Real Height: 161.6 cm (5’3″) Weight: 45 kg (99 lbs) Blood Type: O Instagram: YouTube: Facts: ![]() ![]() Stage Name: Yubin (유빈) Birth Name: Kim Yu Bin (김유빈) Birthday: OctoZodiac Sign: Libra Nationality: Korean Official Height: 163 cm (5’4″) / Approx.
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